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Proceedings Paper

Quantum well infrared photodetector array grown by MOCVD using GAs/AlGaAS MQW
Author(s): Grachik H. Avetisyan; Vladimir B. Kulikov; Vitalij P. Kotov; Alexej K. Erkin; Igor Dmitrievich Zalevsky
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Paper Abstract

Photodetector array fabrication using GaAs/AlGaAs multiple quantum wells, grown by MOCVD is discussed. The array uses X-Y-addressing and is multiplexed by a CCD under through CMOS switches. It has 64 X 64 elements, operates in 8 - 12 mkm spectral interval and provides D* equals 1,5.1010 W-1 cm Hz1/2 at 75 K.

Paper Details

Date Published: 8 April 1996
PDF: 8 pages
Proc. SPIE 2790, Fifth Conference on Charge-Coupled Devices and CCD Systems, (8 April 1996); doi: 10.1117/12.238219
Show Author Affiliations
Grachik H. Avetisyan, Pulsar Science Research Institute (Russia)
Vladimir B. Kulikov, Pulsar Science Research Institute (Russia)
Vitalij P. Kotov, Pulsar Science Research Institute (Russia)
Alexej K. Erkin, Pulsar Science Research Institute (Russia)
Igor Dmitrievich Zalevsky, Sigma-Plus Co. (Russia)


Published in SPIE Proceedings Vol. 2790:
Fifth Conference on Charge-Coupled Devices and CCD Systems
Vladimir A. Karasev; Yuri A. Kuznetsov; Victor A. Shilin, Editor(s)

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