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Proceedings Paper

Preparation and properties of ferroelectric thin PZT films
Author(s): Dionizy Czekaj; Zygmunt Surowiak; Vladimir P. Dudkevich; A. A. Bakirov
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Paper Abstract

By means of rf sputtering the ferroelectric thin film of PZT-type with the chemical constitution Pb(Zr0.52Ti0.46W0.01Cd0.01)O3, thickness df equals (1 - 2.5) multiplied by 10-6 m and polycrystalline structure was obtained. Either metallic foils or ceramics were used as substrates. In the case of thin film deposition on steel substrate and platinum at low temperatures (Ts less than 723 K) the nonferroelectric intermediate layer with the same chemical constitution but with the pyrochlore type structure has been created. Structural peculiarities are reflected in anomalous dielectric dependencies of the thin films. Obtained results are considered and discussed.

Paper Details

Date Published: 8 April 1996
PDF: 5 pages
Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238159
Show Author Affiliations
Dionizy Czekaj, Silesian Univ. (Poland)
Zygmunt Surowiak, Silesian Univ. (Poland)
Vladimir P. Dudkevich, Rostov-on-Don State Univ. (Russia)
A. A. Bakirov, Rostov-on-Don State Univ. (Russia)


Published in SPIE Proceedings Vol. 2780:
Metal/Nonmetal Microsystems: Physics, Technology, and Applications
Benedykt W. Licznerski; Andrzej Dziedzic, Editor(s)

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