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Proceedings Paper

Thermoelectric properties of high-temperature recrystallized Ge films
Author(s): Graznya Beensh-Marchwicka; Stanislaw Osadnik; Eugeniusz Prociow
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Paper Abstract

The behavior of the magnetron sputtered Ge films under annealing in vacuum at various temperatures up to 1173 K is described. The relation between the dc conductivity and the thermoelectric power versus temperature (300 - 500 K) for films annealed in various conditions is given. The changes in the electrical parameters of films were correlated with data obtained from structural analysis and the optical measurements.

Paper Details

Date Published: 8 April 1996
PDF: 4 pages
Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238158
Show Author Affiliations
Graznya Beensh-Marchwicka, Technical Univ. of Wroclaw (Poland)
Stanislaw Osadnik, Technical Univ. of Wroclaw (Poland)
Eugeniusz Prociow, Technical Univ. of Wroclaw (Poland)


Published in SPIE Proceedings Vol. 2780:
Metal/Nonmetal Microsystems: Physics, Technology, and Applications
Benedykt W. Licznerski; Andrzej Dziedzic, Editor(s)

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