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Proceedings Paper

Numerical studies of quantum dot electrical transport properties
Author(s): Stanislaw Pawlowski; Andrzej Kusy; Roman Sikora; Mariusz Maczka; Elzbieta Machowska-Podsiadlo
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Paper Abstract

A model of controlled-barrier quantum dot based on GaAs/AlGaAs heterostructure has been considered. The analytic form of potential V(x,y) confining the 2DEG has been assumed. It results from application of two biasing voltages: bottom gate Ug and upper electrode Ub. Schrodinger equation for the model has been solved and on this basis transmission coefficient (T) vs electron energy has been calculated for different values of drain to source voltage. Resonance tunneling results in T equals 1 for eigen values of energy within the quantum well. When Uds increases T decreases below one and shifting of the peaks into the higher energies takes place. Abrupt changes of drain current and peaks in dynamic conductance both versus Uds have also been found for zero temperature. When temperature increases the smearing of steps in the current and broadening of conductance peaks have been observed.

Paper Details

Date Published: 8 April 1996
PDF: 6 pages
Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238154
Show Author Affiliations
Stanislaw Pawlowski, Rzeszow Univ. of Technology (Poland)
Andrzej Kusy, Rzeszow Univ. of Technology (Poland)
Roman Sikora, Rzeszow Univ. of Technology (Poland)
Mariusz Maczka, Rzeszow Univ. of Technology (Poland)
Elzbieta Machowska-Podsiadlo, Rzeszow Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 2780:
Metal/Nonmetal Microsystems: Physics, Technology, and Applications
Benedykt W. Licznerski; Andrzej Dziedzic, Editor(s)

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