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Proceedings Paper

Conductivity measurement of GaAs layers after oxygen ion bombardment
Author(s): Zdzistaw Synowiec; A. Romanowski; Maria Dabrowska-Szata
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Paper Abstract

The GaAs layers of a thickness of 200 nm and donor concentration of about 1018 cm-3 were bombarded by 0+ ions with doses above 1013 cm-2 at the energies of 125, 150, and 250 keV. The dc and ac conductivities of GaAs layers at the temperatures of 77 - 330 K were investigated. The dc measurements of the resistivity as at function of temperature indicate the following relationship: ln(rho) approximately equals T-1/4. It confirms the variable-range of hopping conductivity. The ac conductivity measurements of GaAs layers in the frequency range of 15 Hz - 30 kHz show the dependence of an activation energy on trap emissivity according to the formulae e approximately equals exp(-Ea/kT). The values of an activation energy calculated from the slope of Arhenius line is of 75.06 meV.

Paper Details

Date Published: 8 April 1996
PDF: 4 pages
Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238148
Show Author Affiliations
Zdzistaw Synowiec, Technical Univ. of Wroclaw (Poland)
A. Romanowski, Technical Univ. of Wroclaw (Poland)
Maria Dabrowska-Szata, Technical Univ. of Wroclaw (Poland)


Published in SPIE Proceedings Vol. 2780:
Metal/Nonmetal Microsystems: Physics, Technology, and Applications
Benedykt W. Licznerski; Andrzej Dziedzic, Editor(s)

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