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Proceedings Paper

FTIR study of oxygen precipitation in high-pressure-treated Cz-Si contaminated by transition metals
Author(s): B. Surma; Andrzej Misiuk; Malgorzata Mozdzonek; Juergen Hartwig; E. Prieur
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Paper Abstract

The influence of metallic contaminants (Ni, Mo) on the oxygen precipitation process during high temperature (HT) treatment under hydrostatic pressure (HP) was studied. No significant influence of Ni and Mo contaminants on the oxygen precipitation process at 1400 K was observed. Changes of interstitial oxygen concentrations c0 after HP-HT treatment for contaminated and for non-contaminated samples were less than 10%. The metallic contaminants (ni, Mo) cause mostly generation of large strain fields in the matrix probably related to metallic precipitates as evidenced by x-ray topography.

Paper Details

Date Published: 8 April 1996
PDF: 6 pages
Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238147
Show Author Affiliations
B. Surma, Institute of Electronic Materials Technology (Poland)
Andrzej Misiuk, Institute of Electron Technology (Poland)
Malgorzata Mozdzonek, Institute of Electronic Materials Technology (Poland)
Juergen Hartwig, ESRF (France)
E. Prieur, ESRF (France)


Published in SPIE Proceedings Vol. 2780:
Metal/Nonmetal Microsystems: Physics, Technology, and Applications
Benedykt W. Licznerski; Andrzej Dziedzic, Editor(s)

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