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Proceedings Paper

DLTS study in GaAs1-xSbx
Author(s): Ewa Placzek-Popko; Jan Szatkowski; A. Hajdusianek; Ewa Beata Radojewska
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Paper Abstract

In the present paper we have shown the results of our DLTS studies in GaAs0.945Sb0.055 LPE semiconducting compound. Only one electron trap has been detected within whole experimental temperature range 80 K - 300 K. The concentration of the trap was found to be of the order of 1012 cm-3within the whole barrier region of the junction. The trap behaves very different from the usually observed traps in DLTS experiment. The DLTS peak is asymmetrically broadened and shifts to lower temperatures with increasing width of filling pulse which implies that dislocations are the origin of the trap.

Paper Details

Date Published: 8 April 1996
PDF: 4 pages
Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238145
Show Author Affiliations
Ewa Placzek-Popko, Technical Univ. of Wroclaw (Poland)
Jan Szatkowski, Technical Univ. of Wroclaw (Poland)
A. Hajdusianek, Technical Univ. of Wroclaw (Poland)
Ewa Beata Radojewska, Technical Univ. of Wroclaw (Poland)


Published in SPIE Proceedings Vol. 2780:
Metal/Nonmetal Microsystems: Physics, Technology, and Applications
Benedykt W. Licznerski; Andrzej Dziedzic, Editor(s)

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