Share Email Print
cover

Proceedings Paper

LBIC investigation of the dynamic behavior of trapping-recombination centers
Author(s): Bogdan Paszkiewicz; A. Romanowski; Regina Paszkiewicz; Marek Panek; Marek J. Tlaczala; Przemyslaw Andrzejewski
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The LBIC method was used to investigate the trapping-recombination centers in GaAs:Si layers grown by MOCVD method. The special test structure was developed and performed. The model which joins the measured signal changes with the presence of trapping centers from substrate (EL2 deep levels) and surface.

Paper Details

Date Published: 8 April 1996
PDF: 4 pages
Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238144
Show Author Affiliations
Bogdan Paszkiewicz, Technical Univ. of Wroclaw (Poland)
A. Romanowski, Technical Univ. of Wroclaw (Poland)
Regina Paszkiewicz, Technical Univ. of Wroclaw (Poland)
Marek Panek, Technical Univ. of Wroclaw (Poland)
Marek J. Tlaczala, Technical Univ. of Wroclaw (Poland)
Przemyslaw Andrzejewski, Technical Univ. of Wroclaw (Poland)


Published in SPIE Proceedings Vol. 2780:
Metal/Nonmetal Microsystems: Physics, Technology, and Applications
Benedykt W. Licznerski; Andrzej Dziedzic, Editor(s)

© SPIE. Terms of Use
Back to Top