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Proceedings Paper

Photoreflectance spectroscopy for semiconductor structure investigations
Author(s): Jan Misiewicz
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Paper Abstract

Photoreflectance spectroscopy as the nondestructive, contactless, room temperature method to investigate semiconductor layers, interfaces, structures and devices is presented. Principles of the method are described. Application to the investigations of the III-V compounds structures, including heterojunction bipolar transistors, high electron mobility transistors vertical cavity surface emitting lasers and quantum dots arrays are shown.

Paper Details

Date Published: 8 April 1996
PDF: 8 pages
Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238143
Show Author Affiliations
Jan Misiewicz, Technical Univ. of Wroclaw (Poland)


Published in SPIE Proceedings Vol. 2780:
Metal/Nonmetal Microsystems: Physics, Technology, and Applications

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