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Proceedings Paper

Electrically active defects in Ni-contaminated Cz-Si with oxygen precipitates
Author(s): Pawel Kaminski; Roman Kozlowski; Andrzej Misiuk
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Paper Abstract

Electrically active defects in preannealed n-type Cz-Si crystals subjected to high-pressure heat treatment were studied by deep level transient spectroscopy (DLTS). Experimental evidence is given that electron traps at Ec - 0.20 eV, Ec - 0.45 eV and Ec - 0.62 eV are presumably related to an oxygen-multivacancy complex, an acceptor level of Ni and a point defect decorating extended defects, respectively.

Paper Details

Date Published: 8 April 1996
PDF: 4 pages
Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238141
Show Author Affiliations
Pawel Kaminski, Institute of Electronic Materials Technology (Poland)
Roman Kozlowski, Institute of Electronic Materials Technology (Poland)
Andrzej Misiuk, Institute of Electron Technology (Poland)


Published in SPIE Proceedings Vol. 2780:
Metal/Nonmetal Microsystems: Physics, Technology, and Applications
Benedykt W. Licznerski; Andrzej Dziedzic, Editor(s)

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