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Proceedings Paper

Digital analysis of photo-induced current transients in semi-insulating GaAs and InP
Author(s): Pawel Kaminski; Michal Pawlowski; Robert Cwirko; M. Palczewska; Roman Kozlowski
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Paper Abstract

Digital PITS technique was applied to study deep-level defects in semi-insulating GaAs and InP. The studies were completed by measurements of ESR spectra on the same wafers.

Paper Details

Date Published: 8 April 1996
PDF: 4 pages
Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238140
Show Author Affiliations
Pawel Kaminski, Institute of Electronic Materials Technology (Poland)
Michal Pawlowski, Military Univ. of Technology (Poland)
Robert Cwirko, Military Univ. of Technology (Poland)
M. Palczewska, Institute of Electronic Materials Technology (Poland)
Roman Kozlowski, Institute of Electronic Materials Technology (Poland)


Published in SPIE Proceedings Vol. 2780:
Metal/Nonmetal Microsystems: Physics, Technology, and Applications
Benedykt W. Licznerski; Andrzej Dziedzic, Editor(s)

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