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Proceedings Paper

Deep localized state energy distribution in a-Se and a-Si:H layers
Author(s): J. Kalade; Edmundas Montrimas; R. Maldzius
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Paper Abstract

In this work experimental technique for determination of energy distribution of localized states of charge carries in high-resistance semiconductors as well as its mathematical description have been developed. This method has been applied for determination of energy distribution of electrons and holes in an a-Se layer at the temperature of 170 and 145 K in the energy interval 0.59 - 1.8 eV relative to the conduction edge of the carrier mobility gap. It has been discovered that light with lambda less than 1.06 micrometer generates not only holes, but electrons, too. Peculiarities of electron localization states in an a-Si:H layer at 85 K have been investigated.

Paper Details

Date Published: 8 April 1996
PDF: 4 pages
Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); doi: 10.1117/12.238139
Show Author Affiliations
J. Kalade, Vilnius Univ. (Lithuania)
Edmundas Montrimas, Vilnius Univ. (Lithuania)
R. Maldzius, Vilnius Univ. (Lithuania)


Published in SPIE Proceedings Vol. 2780:
Metal/Nonmetal Microsystems: Physics, Technology, and Applications
Benedykt W. Licznerski; Andrzej Dziedzic, Editor(s)

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