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Proceedings Paper

193-nm lithography (Review Paper)
Author(s): Mordechai Rothschild; Anthony R. Forte; Mark W. Horn; Roderick R. Kunz; Susan C. Palmateer; Jan H. C. Sedlacek
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Paper Abstract

The trend in microelectronics toward printing features 0.25 micrometers and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials, and photoresist chemistries and processes. This paper reviews the current status of these various topics, as they have been engineered under a multi-year program at MIT Lincoln Laboratory.

Paper Details

Date Published: 8 April 1996
PDF: 7 pages
Proc. SPIE 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics, (8 April 1996); doi: 10.1117/12.237751
Show Author Affiliations
Mordechai Rothschild, MIT Lincoln Lab. (United States)
Anthony R. Forte, MIT Lincoln Lab. (United States)
Mark W. Horn, MIT Lincoln Lab. (United States)
Roderick R. Kunz, MIT Lincoln Lab. (United States)
Susan C. Palmateer, MIT Lincoln Lab. (United States)
Jan H. C. Sedlacek, MIT Lincoln Lab. (United States)


Published in SPIE Proceedings Vol. 2703:
Lasers as Tools for Manufacturing of Durable Goods and Microelectronics
Jan J. Dubowski; Jyotirmoy Mazumder; Leonard R. Migliore; Chandrasekhar Roychoudhuri; Ronald D. Schaeffer, Editor(s)

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