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Proceedings Paper

Laser-induced surface doping of semiconductors
Author(s): Koji Sugioka; Koichi Toyoda; Masayuki Jyumonji; Hiroshi Takai
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Paper Abstract

Formation of shallow junction with extremely high carrier concentration is presented by KrF excimer laser doping of GaAs using an ambient SiH4 gas. The generation mechanism and thermal stability of the high carrier concentration in GaAs formed by the laser doping are also investigated. In addition, submicron patterned doping of Si into GaAs is demonstrated using a projection system. The projection-patterned doping is applied to self-aligned microfabrication of nonalloyed ohmic contacts with a low contact resistance with combination of a following plating process. Furthermore, junction deeper than 1 micrometers is formed by laser-driven diffusion of As+-implanted Si. The double-pulse irradiation method using two KrF excimer lasers drastically improves surface morphology and crystalline quality of the deep junction.

Paper Details

Date Published: 8 April 1996
PDF: 12 pages
Proc. SPIE 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics, (8 April 1996); doi: 10.1117/12.237742
Show Author Affiliations
Koji Sugioka, RIKEN-The Institute of Physical and Chemical Research (Japan)
Koichi Toyoda, RIKEN-The Institute of Physical and Chemical Research (Japan)
Masayuki Jyumonji, Tokyo Denki Univ. (Japan)
Hiroshi Takai, Tokyo Denki Univ. (Japan)


Published in SPIE Proceedings Vol. 2703:
Lasers as Tools for Manufacturing of Durable Goods and Microelectronics
Jan J. Dubowski; Jyotirmoy Mazumder; Leonard R. Migliore; Chandrasekhar Roychoudhuri; Ronald D. Schaeffer, Editor(s)

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