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Proceedings Paper

Kinetics and microstructure of laser chemical vapor deposition of titanium nitride
Author(s): Kieth M. Egland; Jyotirmoy Mazumder
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Paper Abstract

Titanium nitride (TiN) has been deposited by laser chemical vapor deposition (LCVD) using a CO2 laser and N2, H2, and TiCl4 reactant gases. Multi-wavelength pyrometry has been used to determine deposition temperatures. Growth rates based on film height are typically 3000 - 10000 angstroms/second. Film profiles are Gaussian with a coarsened polyhedral morphology that show a marked size dependence on deposition temperature. Auger analyses reveal a substoichiometric composition (N/Ti < 1), regardless of reactant gas composition or deposition temperature. Previous work on TiN LCVD suggested a two-regime mechanism, depending on gas composition. By eliminating temperature variation, this work suggests a one-mechanism field over the whole range of gas compositions.

Paper Details

Date Published: 8 April 1996
PDF: 11 pages
Proc. SPIE 2703, Lasers as Tools for Manufacturing of Durable Goods and Microelectronics, (8 April 1996); doi: 10.1117/12.237738
Show Author Affiliations
Kieth M. Egland, Univ. of Illinois/Urbana-Champaign (United States)
Jyotirmoy Mazumder, Univ. of Illinois/Urbana-Champaign (United States)

Published in SPIE Proceedings Vol. 2703:
Lasers as Tools for Manufacturing of Durable Goods and Microelectronics
Jan J. Dubowski; Jyotirmoy Mazumder; Leonard R. Migliore; Chandrasekhar Roychoudhuri; Ronald D. Schaeffer, Editor(s)

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