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Proceedings Paper

Optical absorption and photoresponse in fully quaternary p-type quantum well detectors
Author(s): James R. Hoff; Christopher Louis Jelen; Steven Slivken; Gail J. Brown; Manijeh Razeghi
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Paper Abstract

Acceptor doped, non-strained aluminum-free Quantum Well Intersubband Photodetectors lattice matched to GaAs with Ga0.79In0.21As0.59P0.41 wells and Ga0.62In0.38As0.22P0.78 barriers have been demonstrated on semi-insulating GaAs substrates. These devices which operate at normal incidence demonstrate a unique spectral response which extends from approximately 2 micrometers up to 10 micrometers . To explain such a broad spectral shape, a detailed theoretical analysis based on the 8 X 8 Kane Hamiltonian was necessary to probe all aspect of optical absorption. The results of this analysis revealed that spectral shape results from the influence of the Spin Split-off band on the band structure and the optical matrix.

Paper Details

Date Published: 12 April 1996
PDF: 10 pages
Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237713
Show Author Affiliations
James R. Hoff, Northwestern Univ. (United States)
Christopher Louis Jelen, Northwestern Univ. (United States)
Steven Slivken, Northwestern Univ. (United States)
Gail J. Brown, Air Force Wright Lab. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 2685:
Photodetectors: Materials and Devices
Manijeh Razeghi, Editor(s)

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