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Proceedings Paper

Peculiarities of electrically active states generation in HgCdTe
Author(s): Volodymyr G. Savitsky; Peter E. Storchun
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Paper Abstract

An investigation of native defect formation in n-HgCdTe was performed under conditions that reduce the possibility of mercury atom loss to define the contribution from complex defects to electrically active state formation. The short-term heat treatments were produced in vacuum by passing the current directly through a sample. The temperature measurement was carried out by registering the Planck radiation from the sample surface.

Paper Details

Date Published: 12 April 1996
PDF: 5 pages
Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237711
Show Author Affiliations
Volodymyr G. Savitsky, Ivan Franko State Univ. (Ukraine)
Peter E. Storchun, Ivan Franko State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 2685:
Photodetectors: Materials and Devices
Manijeh Razeghi, Editor(s)

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