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Proceedings Paper

Simple computer analysis of InP and GaAs avalanche photodetectors using different ionization rate data
Author(s): J. P. Banerjee
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Paper Abstract

Steady state computer analysis in the dark followed by time domain analysis in presence of optical radiation has been carried out to study the effect of ionization rates of charge carriers on the quantum efficiency and avalanche noise factors of p+nn+ and p+pnn+ structures of InP and GaAs avalanche photodetectors (APD). The simulation results show that the quantum efficiency of a GaAs APD is higher (80% at (lambda) equals 0.79 micrometers ) than that of an InP APD (64% at (lambda) equals 0.89 micrometers ) for both the structures. The results also suggest that the noise performance characteristics of both InP and GaAs APD's are sensitive functions of ionization rate data but the quantum efficiency is almost independent of ionization rates.

Paper Details

Date Published: 12 April 1996
PDF: 10 pages
Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237709
Show Author Affiliations
J. P. Banerjee, Univ. of Calcutta (India)

Published in SPIE Proceedings Vol. 2685:
Photodetectors: Materials and Devices
Manijeh Razeghi, Editor(s)

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