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Proceedings Paper

Silicon-based resonant cavity detectors for long-wave infrared imaging
Author(s): David J. Robbins; Roger Timothy Carline; Mark Brian Stanaway; Weng Y. Leong
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Paper Abstract

A vertical resonant cavity detector for thermal imaging in the 8 - 9 micrometers wavelength range has been demonstrated, using a p-SiGe/Si quantum well structure on a silicon-on-insulator substrate with a 2 micrometers thick buried oxide layer. The photoresponse spectrum shows peaks at wavelengths corresponding to standing waves in the cavity, confirming resonant detection. The measured responsivity at the main cavity resonance near 8.7 micrometers , with 2 V bias, is 10 mA/W. This is several times larger than the responsivity typically observed, at the same wavelength and bias, for comparable non-resonant detectors grown on attenuating p+-Si substrates. The resonant device uses the Si/SiO2 interface as the buried mirror. The reflectance of this interface is particularly high between 7 - 9 micrometers , due of the dispersion of the refractive index near the oxide phonon absorption band.

Paper Details

Date Published: 12 April 1996
PDF: 7 pages
Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237705
Show Author Affiliations
David J. Robbins, Defence Research Agency Malvern (United Kingdom)
Roger Timothy Carline, Defence Research Agency Malvern (United Kingdom)
Mark Brian Stanaway, Defence Research Agency Malvern (United Kingdom)
Weng Y. Leong, Defence Research Agency Malvern (United Kingdom)


Published in SPIE Proceedings Vol. 2685:
Photodetectors: Materials and Devices
Manijeh Razeghi, Editor(s)

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