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Proceedings Paper

Liquid-phase epitaxial growth process of InGaAs on InP with rare-earth treatment
Author(s): Wei Gao; Paul Raymond Berger; Robert G. Hunsperger; Jagadeesh Pamulapati; Richard T. Lareau
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Paper Abstract

We will present high quality In0.53Ga0.47As which has been grown on semi- insulating (100) InP:Fe substrates by rare earth doped (Yb, Gd, and Er) liquid phase epitaxy using a graphite boat. The new earth ions, which are highly reactive, are thought to better impurities like O, C, and Si by reacting with these impurities and precipitating out in the melt, but not incorporating into the epitaxial layer to any significant amount.

Paper Details

Date Published: 12 April 1996
PDF: 7 pages
Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237703
Show Author Affiliations
Wei Gao, Univ. of Delaware (United States)
Paul Raymond Berger, Univ. of Delaware (United States)
Robert G. Hunsperger, Univ. of Delaware (United States)
Jagadeesh Pamulapati, U.S. Army Research Lab. (United States)
Richard T. Lareau, U.S. Army Research Lab. (United States)

Published in SPIE Proceedings Vol. 2685:
Photodetectors: Materials and Devices
Manijeh Razeghi, Editor(s)

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