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Proceedings Paper

UV/VIS photodetectors in wide-bandgap semiconductors: GaAs and polycrystalline diamond
Author(s): Peter B. Kosel; D. Wu; A. M. Dalton; Amir Amin Hanjani; S. F. Carr; P. R. Emmert; R. L. C. Wu
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Paper Abstract

The semiconductors gallium arsenide and polycrystalline diamond can both be obtained in a high resistivity form suitable for the fabrication of photosensors and detector arrays for the ultraviolet region of the electromagnetic spectrum. These materials have different energy bandgaps and chemical properties which make them complementary partners in providing photodetectors for coverage of the spectral range from near 100 nm in the vacuum ultraviolet to the near infrared at 870 nm. The readily available forms of these two semiconductors are different. GaAs is available in the form of single crystal wafers with uniform properties while polycrystalline diamond in a tight packing of crystallites with varying orientations providing only an average uniformity on the micron scale determined by the size of the crystallites. The GaAs MSM detectors were studied for use in monolithic GaAs-based charge-coupled device scanners for the ultraviolet spectroscopy. The polycrystalline diamond MSM devices are being investigated for hybrid scanners on silicon for the vacuum ultraviolet.

Paper Details

Date Published: 12 April 1996
PDF: 9 pages
Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237698
Show Author Affiliations
Peter B. Kosel, Univ. of Cincinnati (United States)
D. Wu, Univ. of Cincinnati (United States)
A. M. Dalton, Univ. of Cincinnati (United States)
Amir Amin Hanjani, Univ. of Cincinnati (United States)
S. F. Carr, Air Force Wright Lab. (United States)
P. R. Emmert, Air Force Wright Lab. (United States)
R. L. C. Wu, K Systems Corp. (United States)


Published in SPIE Proceedings Vol. 2685:
Photodetectors: Materials and Devices
Manijeh Razeghi, Editor(s)

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