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Proceedings Paper

GaN, GaAlN, and AlN for use in UV detectors for astrophysics: an update
Author(s): Patrick Kung; Adam W. Saxler; Xiaolong Zhang; Danielle Walker; Manijeh Razeghi; Melville P. Ulmer
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Paper Abstract

In SPIE Proceeding 2397 we demonstrated that there is a large payoff still to be gained by further improvements in the performance of solar blind UV detectors for astronomical purposes. We suggested that a particularly promising future technology is one based on the ability of investigators to produce high-quality films made of wide bandgap III-IV semiconductors. Here we report on significant progress we have made over the past year to fabricate and test single-pixel devices. The next step will be to measure and improve detective efficiency, measure the solar blindness over a larger dynamic range, and begin developing multiple-pixel designs.

Paper Details

Date Published: 12 April 1996
PDF: 6 pages
Proc. SPIE 2685, Photodetectors: Materials and Devices, (12 April 1996); doi: 10.1117/12.237696
Show Author Affiliations
Patrick Kung, Northwestern Univ. (United States)
Adam W. Saxler, Northwestern Univ. (United States)
Xiaolong Zhang, Northwestern Univ. (United States)
Danielle Walker, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)
Melville P. Ulmer, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 2685:
Photodetectors: Materials and Devices
Manijeh Razeghi, Editor(s)

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