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Proceedings Paper

Advanced epitaxial growth and device processing techniques for ultrahigh-speed (>40 GHz) directly modulated semiconductor lasers
Author(s): John D. Ralston; Eric C. Larkins; K. Eisele; S. Weisser; Susann Buerkner; A. Schoenfelder; Juergen Daleiden; Konrad Czotscher; Ignacio Esquivias; Joachim Fleissner; R. E. Sah; Martin Maier; Willy Benz; Josef Rosenzweig
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Paper Abstract

Optimized molecular-beam epitaxial growth of pseudomorphic MQWs, the application of abrupt and spatially-localized carbon doping, and the development of short-cavity coplanar ridge-waveguide structures with high-quality chemically-assisted ion-beam etched facets have been combined to fabricate GaAs-based MQW lasers which have achieved damping-limited direct modulation bandwidths exceeding 40 GHz. More detailed measurements indicate intrinsic modulation bandwidths exceeding 60 GHz for devices with p-doped active regions. The reduced linewidth enhancement factor, (alpha) , observed in these lasers also indicates their suitability for low-chirp high-speed direct modulation. The laser design has been further incorporated into a complete technological process for the monolithic integration of GaAs MQW lasers and HEMT-based laser-driver circuits capable of operation in data rates up to 20 Gb/s. Using the impurity-free interdiffusion process, large shifts in the lasing wavelength have been achieved with no strain relaxation and while maintaining the high-speed modulation properties of the pseudo-morphic InGaAs/GaAs MQW lasers, demonstrating the feasibility of fabricating high-speed multi-wavelength laser arrays.

Paper Details

Date Published: 10 April 1996
PDF: 12 pages
Proc. SPIE 2683, Fabrication, Testing, and Reliability of Semiconductor Lasers, (10 April 1996); doi: 10.1117/12.237689
Show Author Affiliations
John D. Ralston, SDL, Inc. (United States)
Eric C. Larkins, Univ. of Nottingham (United Kingdom)
K. Eisele, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
S. Weisser, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Susann Buerkner, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
A. Schoenfelder, SDL, Inc. (Germany)
Juergen Daleiden, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Konrad Czotscher, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Ignacio Esquivias, Univ. Politecnica de Madrid (Spain)
Joachim Fleissner, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
R. E. Sah, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Martin Maier, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Willy Benz, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Josef Rosenzweig, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)


Published in SPIE Proceedings Vol. 2683:
Fabrication, Testing, and Reliability of Semiconductor Lasers
Mahmoud Fallahi; S. C. Wang, Editor(s)

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