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Proceedings Paper

Effect of p-dopant positioning in low-threshold, InGaAs/GaAs/AlGaAs, MQW GRINSCH lasers with GaAs etch-stop layer for multiwavelength applications
Author(s): Michael M. Dion; P. Levesque; Zbigniew R. Wasilewski; Mahmoud Fallahi; F. Chatenoud; Robin L. Williams; S. J. Rolfe
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Paper Abstract

Etch-stop layers have proven essential in fabricating devices such as distributed Bragg reflector (DBR) laser arrays which require a high degree of uniformity and precise depth positioning of the gratings. In this report, we investigate the dependence of the threshold current density and external quantum efficiency on the p-dopants' starting position in InGaAs/GaAs/AlGaAs quantum well graded-index separate-confinement heterostructure (GRINSCH) lasers with a GaAs etch-stop layer. The laser structures were grown by molecular-beam epitaxy with As2. With the etch-stop layer approximately 200 nm above the active region's top AlGaAs graded layer, it is found that a significant fraction of injected carriers will recombine in the etch-stop layer if this layer is not sufficiently doped and if the p- dopants are not near enough to the graded layer in the active region. This results in a very high threshold current, a very low efficiency, and the presence of a high-energy peak, corresponding to the GaAs etch-stop layer acting as a quantum well, in the electroluminescence (EL) spectrum. On the other hand, with the dopants positioned correctly, we obtain very low threshold current densities and see no evidence of EL emission from the etch-stop layer. The experimental results are consistent with computer modeling performed with a commercial simulator. Results will also be presented on multiple-wavelength DBR lasers made from these structures.

Paper Details

Date Published: 10 April 1996
PDF: 10 pages
Proc. SPIE 2683, Fabrication, Testing, and Reliability of Semiconductor Lasers, (10 April 1996); doi: 10.1117/12.237687
Show Author Affiliations
Michael M. Dion, National Research Council of Canada (Canada)
P. Levesque, National Research Council of Canada (Canada)
Zbigniew R. Wasilewski, National Research Council of Canada (Canada)
Mahmoud Fallahi, National Research Council of Canada (Canada)
F. Chatenoud, National Research Council of Canada (Canada)
Robin L. Williams, National Research Council of Canada (Canada)
S. J. Rolfe, National Research Council of Canada (Canada)


Published in SPIE Proceedings Vol. 2683:
Fabrication, Testing, and Reliability of Semiconductor Lasers
Mahmoud Fallahi; S. C. Wang, Editor(s)

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