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Proceedings Paper

High-power diode lasers based on InGaAsP spacer and waveguide layers with AlGaAs cladding layers
Author(s): Goetz Erbert; Frank Bugge; Arne Knauer; Juergen Sebastian; Klaus Vogel; Marcus Weyers
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Paper Abstract

Broad-area stripe laser diodes based on GaAs and Al-free spacer and Al-free spacer and waveguide layers were studied and compared to conventional AlGaAs-laser diodes. The structures were grown by low pressure MOVPE (metal organic vapor phase epitaxy). For the active region InGaAs-single quantum wells with an emission wavelength of 915 nm were used. Threshold current density, internal loss and internal efficiency are comparable for the three structures under study. The use of a quaternary spacer layer instead of GaAs improves the performance for laser diodes with a low divergence ((Theta) perpendicular equals 20 degree(s) FWHM). Using a non-optimized facet coating procedure about 1.2 W cw output power at a vertical divergence of (Theta) perpendicular equals 26.5 degree(s) are obtained from a 50 micrometers wide stripe laser with Al-free waveguides.

Paper Details

Date Published: 10 April 1996
PDF: 10 pages
Proc. SPIE 2683, Fabrication, Testing, and Reliability of Semiconductor Lasers, (10 April 1996); doi: 10.1117/12.237684
Show Author Affiliations
Goetz Erbert, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik Berlin (Germany)
Frank Bugge, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik Berlin (Germany)
Arne Knauer, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik Berlin (Germany)
Juergen Sebastian, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik Berlin (Germany)
Klaus Vogel, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik Berlin (Germany)
Marcus Weyers, Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik Berlin (Germany)


Published in SPIE Proceedings Vol. 2683:
Fabrication, Testing, and Reliability of Semiconductor Lasers
Mahmoud Fallahi; S. C. Wang, Editor(s)

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