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Proceedings Paper

InGaAs/Ga(Al)As and Al-free 980-nm pump laser diodes: electro-optical properties and reliability issues
Author(s): Jacques Wallon; S. Bianic; B. Bauduin; Pascal Y. Devoldere
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Paper Abstract

Different 980 nm ridge waveguide pump laser diodes fabricated either from the InGaAs/Ga(Al)As system or from the InGaAs/Ga(In)As(P)/GaInP (Al-free) one, and purchased from different manufacturers, have been submitted to an accurate electro-optical characterization and lifetest for a comparative study. Measurements show that the electro- optical behavior, especially the kink power level and the optical spectrum, is strongly correlated with the stripe design. These different behaviors strongly impact the short term stability of both output power and wavelength of related 980 nm pump laser modules. Lifetests and failure analysis have been performed and demonstrate the vulnerability of the front facet.

Paper Details

Date Published: 10 April 1996
PDF: 9 pages
Proc. SPIE 2683, Fabrication, Testing, and Reliability of Semiconductor Lasers, (10 April 1996); doi: 10.1117/12.237676
Show Author Affiliations
Jacques Wallon, France-Telecom CNET (France)
S. Bianic, France-Telecom CNET (France)
B. Bauduin, France-Telecom CNET (France)
Pascal Y. Devoldere, France-Telecom CNET (France)


Published in SPIE Proceedings Vol. 2683:
Fabrication, Testing, and Reliability of Semiconductor Lasers
Mahmoud Fallahi; S. C. Wang, Editor(s)

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