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Proceedings Paper

Dual-wavelength laser by selective intermixing of GaAs/AlGaAs quantum wells
Author(s): Decai Sun; K. J. Beernink; Robert L. Thornton; David W. Treat
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Paper Abstract

The longer-wavelength quantum well in an AlGaAs/GaAs asymmetric dual quantum well laser structure was selectively removed by localized intermixing. High Si-doping on each side of the longer-wavelength well caused intermixing during an anneal under a SiNx cap, while leaving the other nearby well intact. During an anneal under an exposed GaAs surface layer, both quantum wells remained intact. By patterning the surface with alternating SiNx and exposed GaAs, the longer-wavelength quantum well was selectively intermixed under the SiNx. Integrated broad area lasers were fabricated with threshold current density and external quantum efficiency of 260 A/cm2 and 30%/facet at a wavelength of 751 nm in capped regions and 195 A/cm2, 32%/facet at 824 nm in the uncapped regions. This technique can be used to fabricate close spacing multi-wavelength laser arrays.

Paper Details

Date Published: 10 April 1996
PDF: 6 pages
Proc. SPIE 2683, Fabrication, Testing, and Reliability of Semiconductor Lasers, (10 April 1996); doi: 10.1117/12.237674
Show Author Affiliations
Decai Sun, Xerox Palo Alto Research Ctr. (United States)
K. J. Beernink, Xerox Palo Alto Research Ctr. (United States)
Robert L. Thornton, Xerox Palo Alto Research Ctr. (United States)
David W. Treat, Xerox Palo Alto Research Ctr. (United States)


Published in SPIE Proceedings Vol. 2683:
Fabrication, Testing, and Reliability of Semiconductor Lasers
Mahmoud Fallahi; S. C. Wang, Editor(s)

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