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Proceedings Paper

InAsSb/InAlAsSb quantum-well diode lasers emitting beyond 3 um
Author(s): Hong K. Choi; George W. Turner; M. J. Manfra; M. K. Connors; Frederick P. Herrmann; Arvind Baliga; Neal G. Anderson
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Paper Abstract

The current status of InAsSb/InAlAsSb quantum-well (QW) lasers emitting between 3 and 4 micrometer is described. QW lasers grown on GaSb substrates, with emission wavelengths at approximately 3.9 micrometer, have operated pulsed up to 165 K. At 80 K, cw power of 30 mW/facet has been obtained. Ridge-waveguide lasers have operated cw up to 128 K. QW lasers grown on InAs have emission wavelengths between 3.2 and 3.55 micrometer. Broad- stripe lasers have operated pulsed up to 225 K and ridge-waveguide lasers have operated cw to 175 K. Theoretical analysis of the laser gain using a 6 by 6 k (DOT) p model to calculate the valence subband structure is reported.

Paper Details

Date Published: 12 April 1996
PDF: 7 pages
Proc. SPIE 2682, Laser Diodes and Applications II, (12 April 1996); doi: 10.1117/12.237668
Show Author Affiliations
Hong K. Choi, MIT Lincoln Lab. (United States)
George W. Turner, MIT Lincoln Lab. (United States)
M. J. Manfra, MIT Lincoln Lab. (United States)
M. K. Connors, MIT Lincoln Lab. (United States)
Frederick P. Herrmann, MIT Lincoln Lab. (United States)
Arvind Baliga, Univ. of Massachusetts/Amherst (United States)
Neal G. Anderson, Univ. of Massachusetts/Amherst (United States)


Published in SPIE Proceedings Vol. 2682:
Laser Diodes and Applications II
Kurt J. Linden; Prasad R. Akkapeddi, Editor(s)

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