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Proceedings Paper

AlGaAsSb/InGaAsSb/GaSb quantum well lasers with separate confinement heterostructures for 2-um operation
Author(s): Dmitri Z. Garbuzov; Hao Lee; Pamela K. York; Raymond J. Menna; Ramon U. Martinelli; Louis A. DiMarco; S. Yegna Narayan; David R. Capewell; John C. Connolly
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Paper Abstract

Calculation of the optical field distribution in 2 micrometer AlGaAsSb/InGaAsSb/GaSb multiple quantum well (MQW) lasers shows that incorporation of about 100 nm waveguide layers between quantum wells (QW) and cladding layers increases the optical confinement factor and reduces losses caused by mode penetration into doped cladding layers. Structures of this type have been grown by MBE. Both photoluminescence studies and measurements of laser diode parameters demonstrate that excess carriers confined in the waveguide are effectively collected and recombine in the QWs despite the small valence band offset at the interface of the QW and the waveguide, which is expected to be less than kT at 300 K.

Paper Details

Date Published: 12 April 1996
PDF: 8 pages
Proc. SPIE 2682, Laser Diodes and Applications II, (12 April 1996); doi: 10.1117/12.237658
Show Author Affiliations
Dmitri Z. Garbuzov, David Sarnoff Research Ctr. (United States)
Hao Lee, David Sarnoff Research Ctr. (United States)
Pamela K. York, David Sarnoff Research Ctr. (United States)
Raymond J. Menna, David Sarnoff Research Ctr. (United States)
Ramon U. Martinelli, David Sarnoff Research Ctr. (United States)
Louis A. DiMarco, David Sarnoff Research Ctr. (United States)
S. Yegna Narayan, David Sarnoff Research Ctr. (United States)
David R. Capewell, David Sarnoff Research Ctr. (United States)
John C. Connolly, David Sarnoff Research Ctr. (United States)


Published in SPIE Proceedings Vol. 2682:
Laser Diodes and Applications II
Kurt J. Linden; Prasad R. Akkapeddi, Editor(s)

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