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Proceedings Paper

Internal quantum effeciency measurements of GaInP quantum well laser material using liquid contact luminescence
Author(s): Chia-Fu Hsu; Craig C. Largent; Jeong Seok O; C. L. Young; Peter S. Zory; David P. Bour
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Paper Abstract

A liquid contact luminescence (LCL) technique is described. LCL spectral data obtained by current injection through two GaInP quantum well laser wafers are utilized to determine the internal quantum efficiency ratio for the two wafers. This measured ratio is shown to be in good agreement with the internal quantum efficiency ratio for the two wafers as determined from conventional laser slope efficiency vs. cavity length measurements.

Paper Details

Date Published: 12 April 1996
PDF: 8 pages
Proc. SPIE 2682, Laser Diodes and Applications II, (12 April 1996); doi: 10.1117/12.237650
Show Author Affiliations
Chia-Fu Hsu, Univ. of Florida (United States)
Craig C. Largent, Univ. of Florida (United States)
Jeong Seok O, Univ. of Florida (United States)
C. L. Young, Univ. of Florida (United States)
Peter S. Zory, Univ. of Florida (United States)
David P. Bour, Xerox Palo Alto Research Ctr. (United States)


Published in SPIE Proceedings Vol. 2682:
Laser Diodes and Applications II
Kurt J. Linden; Prasad R. Akkapeddi, Editor(s)

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