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Proceedings Paper

Carrier distributions and leakage in (AlGa)InP visible emitting lasers
Author(s): Peter Blood; Peter M. Smowton; Damian Foulger
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Paper Abstract

We have examined the distribution of carriers between well and barrier in 670 nm GaInP lasers by recording spontaneous emission spectra at threshold as a function of temperature through a top contact window. Assuming the bands in the active region of wells and barrier to be flat at threshold we find that these carrier populations are well described by common quasi- Fermi levels and a carrier temperature equal to the lattice temperature. The activation energy of the thermally activated leakage current at threshold agrees well with that predicted on a flat- band model for the loss of electrons through the X conduction band minima. A self-consistent simulation of the carrier distribution through the complete laser structure at threshold shows that a flat-band model is a reasonable approximation over the range of temperatures (200 K - 400 K) and for the structures considered in this work.

Paper Details

Date Published: 12 April 1996
PDF: 10 pages
Proc. SPIE 2682, Laser Diodes and Applications II, (12 April 1996); doi: 10.1117/12.237645
Show Author Affiliations
Peter Blood, Univ. of Wales College Cardiff (United Kingdom)
Peter M. Smowton, Univ. of Wales College Cardiff (United Kingdom)
Damian Foulger, Univ. of Wales College Cardiff (United Kingdom)


Published in SPIE Proceedings Vol. 2682:
Laser Diodes and Applications II
Kurt J. Linden; Prasad R. Akkapeddi, Editor(s)

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