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Proceedings Paper

Surface nitride/oxynitride layers obtained by multipulse excimer laser irradiation of metal and semiconductor samples
Author(s): Gilberto Leggieri; Armando Luches; Maurizio Martino; Maria Rita Perrone; Valentin Craciun; Ion N. Mihailescu; Ioan Ursu; S. Ganatsios
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Paper Abstract

We report the synthesis of surface nitrides by multipulse XeC1 exciTaer laser irradiation in ambient NH3 atmosphere of metal (Ti Mo) and semiconductor (Si Ge) samples. The amount of nitride formed was shown to depend under various extents on the kind of sample the incident laser fluence and the number of subsequent laser pulses. The nitridation process is very sensitive to the oxygen presence. It was evidenced that only traces of oxygen were sufficient for promoting the formation of oxides and oxynitrides. 1.

Paper Details

Date Published: 1 October 1990
PDF: 12 pages
Proc. SPIE 1352, 1st Intl School on Laser Surface Microprocessing, (1 October 1990); doi: 10.1117/12.23731
Show Author Affiliations
Gilberto Leggieri, Univ. di Lecce (Italy)
Armando Luches, Univ. di Lecce (Italy)
Maurizio Martino, Univ. di Lecce (Italy)
Maria Rita Perrone, Univ. di Lecce (Italy)
Valentin Craciun, Central Institute of Physics (Romania)
Ion N. Mihailescu, Central Institute of Physics (Romania)
Ioan Ursu, Central Institute of Physics (Romania)
S. Ganatsios, Technological and Education Institute (Greece)


Published in SPIE Proceedings Vol. 1352:
1st Intl School on Laser Surface Microprocessing
Ian W. Boyd; Vitali I. Konov; Boris S. Luk'yanchuk, Editor(s)

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