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Proceedings Paper

Investigations on porous silicon layers with regard to chemical microsensor applications
Author(s): Michael J. Schoening; M. Crott; F. Ronkel; M. Thust; J. Walter Schultze; Peter Kordos; Hans Luth
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Paper Abstract

A new concept for silicon microsensors based on porous EIS (Electrolyte-Insulator- Semiconductor) structures is presented. The porous sensor was prepared by anodic etching of n-doped silicon and subsequent deposition of a dielectric layer of SiO2. Experimental conditions were investigated to realize a well-defined macroporous formation of the porous silicon. To compare the chemical sensor properties with similar built-up planar Si/SiO2 structures, C/V (Capacitance-Voltage) measurements have been performed. The porous EIS structures have been characterized by SEM (Scanning Electron Microscopy), XPS (X-ray Photoelectron Spectroscopy) and cyclic voltammetry. This solid-state technology allows the preparation of transducer materials for pH microsensors.

Paper Details

Date Published: 26 April 1996
PDF: 6 pages
Proc. SPIE 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials, (26 April 1996); doi: 10.1117/12.237125
Show Author Affiliations
Michael J. Schoening, Forschungszentrum Juelich GmbH (Germany)
M. Crott, Forschungszentrum Juelich GmbH (Germany)
F. Ronkel, Heinrich-Heine-Univ. Duesseldorf (Germany)
M. Thust, Forschungszentrum Juelich GmbH (Germany)
J. Walter Schultze, Heinrich-Heine-Univ. Duesseldorf (Germany)
Peter Kordos, Forschungszentrum Juelich GmbH (Germany)
Hans Luth, Forschungszentrum Juelich GmbH (Germany)


Published in SPIE Proceedings Vol. 2779:
3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials
Pierre Francois Gobin; Jacques Tatibouet, Editor(s)

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