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Proceedings Paper

Effects of double Schottky barrier on the electric properties of ceramic semiconductors
Author(s): Kazuo Mukae; Koichi Tsuda; Akinori Tanaka
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Paper Abstract

Effects of the interface states at the grain boundaries on the applied voltage dependence of the double Schottky barrier (DSB) are theoretically discussed. Based on the simplified models of rectangular density distributions for the interface states, effects of the energy level, density of states, and the distribution width of the interface states are quantitatively calculated. The I-V characteristics of DSB's are also calculated and the nonlinear I-V relations are discussed. The nonlinear exponent (alpha) of the I-V relation was found to be determined mainly by the barrier height and the total charge of the interface states. The observed ICTS spectra and other electric properties of ZnO varistors and PTC thermistors are discussed on the basis of the above DSB model.

Paper Details

Date Published: 26 April 1996
PDF: 6 pages
Proc. SPIE 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials, (26 April 1996); doi: 10.1117/12.237068
Show Author Affiliations
Kazuo Mukae, Fuji Electric Corporate R&D Ltd. (Japan)
Koichi Tsuda, Fuji Electric Corporate R&D Ltd. (Japan)
Akinori Tanaka, Fuji Electric Corporate R&D Ltd. (Japan)


Published in SPIE Proceedings Vol. 2779:
3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials
Pierre Francois Gobin; Jacques Tatibouet, Editor(s)

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