Share Email Print
cover

Proceedings Paper

Direct formation of GaAs quantum dot structure by droplet epitaxy
Author(s): Nobuyuki Koguchi; Keiko Ishige
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Numerous GaAs epitaxial microcrystals were fabricated on a sulfur-terminated GaAs substrate by sequentially supplying Ga and As molecular beam. The process consists of forming Ga droplets on the inert surface and reacting the droplets with As to produce GaAs microcrystals. This method termed droplet epitaxy is thought to be a promising growth method for fabricating the GaAs quantum dot structure, especially coupled quantum dot structure.

Paper Details

Date Published: 26 April 1996
PDF: 5 pages
Proc. SPIE 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials, (26 April 1996); doi: 10.1117/12.237054
Show Author Affiliations
Nobuyuki Koguchi, National Research Institute for Metals (Japan)
Keiko Ishige, National Research Institute for Metals (Japan)


Published in SPIE Proceedings Vol. 2779:
3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials

© SPIE. Terms of Use
Back to Top