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Proceedings Paper

Exciton confinement effect in semiconductor quantum wells studied by resonant second harmonic generation
Author(s): Hiroyuki Ito; Fujio Minami; Kouji Yoshida; Kuon Inoue; Kenji Watanabe
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Paper Abstract

We have investigated the electronic structures of GaAs/Al(Ga)As and GaAs/AlAs quantum wells by resonance effects of second-harmonic generation. Second-harmonic generation signals manifest themselves in two-photon resonance with the confined 1S and/or 2P excitons in GaAs/Al(Ga)As and ZnSe/ZnS quantum wells. The assignment of the resonance is directly determined from comparison to the results of one-photon and two-photon absorption data. From the energy splitting of the 1S and 2P exciton levels, the exciton binding energies can be determined. There is a significant increase in the binding energy as compared to that in bulk materials. This increase is caused by the exciton confinement effect.

Paper Details

Date Published: 26 April 1996
PDF: 6 pages
Proc. SPIE 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials, (26 April 1996); doi: 10.1117/12.237053
Show Author Affiliations
Hiroyuki Ito, Tokyo Institute of Technology (Japan)
Fujio Minami, Tokyo Institute of Technology (Japan)
Kouji Yoshida, Hokkaido Univ. (Japan)
Kuon Inoue, Hokkaido Univ. (Japan)
Kenji Watanabe, National Institute for Research in Inorganic Mater (Japan)


Published in SPIE Proceedings Vol. 2779:
3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials
Pierre Francois Gobin; Jacques Tatibouet, Editor(s)

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