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Proceedings Paper

Application of ionized cluster beam (ICB) deposition
Author(s): Alexander Stepanovich Zolkin
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Paper Abstract

The design and testing of a new two-temperature metal vapor source for ionized cluster beam (ICB) method are described. The vaporized materials (Ag, atoms and clusters) from a crucible with vapor superheating is partially ionized by electrons at the crucible exit where the vapor has its highest density then accelerated in electric field (5 divided by 10 keV) and deposited on substrate of HTSC Y-Ba-Cu-O films. Very thin (100 divided by 200 nm) metal films with high density and low-resistance contacts Ag/Y-Ba-Cu-O (10-5 divided by 10-8 Ohm(DOT)cm2) were fabricated by ICB. The surface of the films was analyzed by SEM (SE, BSE) with computer analyzer. The application of two-temperature sources in technologies allows one to produce atomic or cluster beams, control the gas dynamic flow and product high-quality metal thin films as a result.

Paper Details

Date Published: 26 April 1996
PDF: 5 pages
Proc. SPIE 2779, 3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials, (26 April 1996); doi: 10.1117/12.237052
Show Author Affiliations
Alexander Stepanovich Zolkin, Novosibirsk State Univ. (Russia)


Published in SPIE Proceedings Vol. 2779:
3rd International Conference on Intelligent Materials and 3rd European Conference on Smart Structures and Materials
Pierre Francois Gobin; Jacques Tatibouet, Editor(s)

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