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Proceedings Paper

Carrier escape time in GaAs/AlGaAs and InGaAs/GaAs quantum well lasers
Author(s): Ignacio Esquivias; Beatriz Romero Herrero; S. Weisser; Konrad Czotscher; John D. Ralston; Eric C. Larkins; Julia Arias; A. Schoenfelder; Michael Mikulla; Joachim Fleissner; Josef Rosenzweig
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Paper Abstract

The transport of carriers along the confinement region, the carrier capture into, and the carrier escape out of the quantum wells (QWs) are limiting processes affecting the high-frequency properties of QW lasers. The influence of these processes on the laser performance depends mainly on the ratio of the effective carrier transport/capture time and the effective escape time. We present experimental results about the escape times for GaAs/AlGaAs and InGaAs/GaAs high-speed QW lasers with varied geometrical dimensions (cavity width and length), number of QWs, In-concentrations, and p-doping levels in the active region, as extracted from electrical impedance measurements in the sub-threshold regime. In addition to the expected increase of the escape time with increasing QW barrier height, we observe an important increase in the escape time for lasers with p-doping. The escape time dependences on the carrier concentration and on the temperature are determined and discussed.

Paper Details

Date Published: 1 April 1996
PDF: 10 pages
Proc. SPIE 2684, High-Speed Semiconductor Laser Sources, (1 April 1996); doi: 10.1117/12.236950
Show Author Affiliations
Ignacio Esquivias, Ciudad Univ. (Spain)
Beatriz Romero Herrero, Ciudad Univ. (Spain)
S. Weisser, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Konrad Czotscher, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
John D. Ralston, SDL, Inc. (United States)
Eric C. Larkins, Fraunhofer-Institut fuer Angewandte Festkoerperphysik and Univ. of Nottingham (United Kingdom)
Julia Arias, Ciudad Univ. (France)
A. Schoenfelder, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Michael Mikulla, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Joachim Fleissner, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Josef Rosenzweig, Fraunhofer-Institut fuer Angewandte Feskoerperphysik (Germany)

Published in SPIE Proceedings Vol. 2684:
High-Speed Semiconductor Laser Sources
Paul A. Morton; Deborah L. Crawford, Editor(s)

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