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Proceedings Paper

Ultrahigh-speed InGaAs/GaAs MQW lasers with C-doped active regions
Author(s): Konrad Czotscher; Eric C. Larkins; S. Weisser; Willy Benz; Juergen Daleiden; Ignacio Esquivias; Joachim Fleissner; Martin Maier; John D. Ralston; Beatriz Romero Herrero; A. Schoenfelder; Josef Rosenzweig
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Paper Abstract

We describe short-cavity In0.35Ga0.65As/GaAs multiple quantum well (MQW) lasers with undoped and p-doped active regions. The epilayer structure consists of four 5.7 nm QWs separated by 20.1 nm barriers in a GaAs core. The cladding layers consist of Al0.8Ga0.2As. In the case of p-doped devices a 4.5 nm carbon (C)-doped region (2.5 multiplied by 1019 cm-3) was inserted above each QW, separated by a 3.1 nm GaAs spacer, resulting in a modulation-doped core region. Using a CAIBE process, short-cavity ridge-waveguide lasers are fabricated in a triple-mesa geometry suitable for on-wafer probing. The best device (6 multiplied by 130 micrometers squared) with an undoped active region attained a damping-limited direct modulation bandwidth exceeding 40 GHz at a cw bias current of 160 mA. In contrast, the p-doped devices, demonstrating a maximum bandwidth of 37 GHz, are still limited by power dissipation. (alpha) -factors as low as 1.4 and 1.5 for undoped and p-doped devices, respectively, are extracted from measurements of the sub- threshold gain spectra. In addition, we demonstrate eye diagrams at 25 Gbit/s (limited by the pulse pattern generator) for these laser diodes. A complete characterization of dc and rf properties of these lasers is presented.

Paper Details

Date Published: 1 April 1996
PDF: 9 pages
Proc. SPIE 2684, High-Speed Semiconductor Laser Sources, (1 April 1996); doi: 10.1117/12.236942
Show Author Affiliations
Konrad Czotscher, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Eric C. Larkins, Univ. of Nottingham (United Kingdom)
S. Weisser, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Willy Benz, Fraunhofer Institut fuer Angewandte Festkoeperphysik (Switzerland)
Juergen Daleiden, Fraunhofer-Institut fuer Angewandte Festkoeperphysik (Germany)
Ignacio Esquivias, Univ. Politecnica (Spain)
Joachim Fleissner, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Martin Maier, Fraunhofer-Institut fuer Angewandte Festkoeperphysik (Germany)
John D. Ralston, SDL, Inc. (United States)
Beatriz Romero Herrero, Uni. Politecnica (Spain)
A. Schoenfelder, SLD, Inc. (Germany)
Josef Rosenzweig, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)


Published in SPIE Proceedings Vol. 2684:
High-Speed Semiconductor Laser Sources
Paul A. Morton; Deborah L. Crawford, Editor(s)

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