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Proceedings Paper

Excimer laser assisted etching of silicon surface in electronegative gases
Author(s): Vladimir G. Ageev; Vitali I. Konov; Andrey I. Krechetov; A. V. Kuzmichov; Alexander M. Prokhorov
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Paper Abstract

Kinetics of the chemical etching of c—Si surfaces in CC14CHC1a CH2C1 , and CH3C1 vapours induced by 20—ns pulses of the UV radiation of'Ar' and KrF excimer lasers is studied. The anomalous high rates of the solid surface etching more than 10 per pulse are realized. Non —thermal mechanisms of the UV photon enhancement of gas—surface reactions are discussed.

Paper Details

Date Published: 1 October 1990
PDF: 13 pages
Proc. SPIE 1352, 1st Intl School on Laser Surface Microprocessing, (1 October 1990); doi: 10.1117/12.23694
Show Author Affiliations
Vladimir G. Ageev, General Physics Institute (Russia)
Vitali I. Konov, Instiutute of General Physics (Russia)
Andrey I. Krechetov, Institute of General Physics (Russia)
A. V. Kuzmichov, Institute of General Physics (Russia)
Alexander M. Prokhorov, Institute of General Physics (Russia)


Published in SPIE Proceedings Vol. 1352:
1st Intl School on Laser Surface Microprocessing

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