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Proceedings Paper

Monolithically integrated high-speed high-power diffraction-limited semiconductor sources for space telecommunications
Author(s): Jean-Marc Verdiell; Robert J. Lang; Kenneth M. Dzurko; Stephen O'Brien; Jules S. Osinski; David F. Welch; Donald R. Scifres
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Paper Abstract

High-power semiconductor sources capable of high-speed modulation are very desirable for free-space digital telecommunications such as satellite optical communication links. Moreover, a diffraction limited beam quality is necessary for most applications. We describe advances in the development of high-power, diffraction-limited semiconductor lasers based on the master oscillator/power amplifier (MOPA) architecture and capable of high-speed modulation. Devices containing monolithically integrated electro-absorption or phase modulators demonstrate 5 GHz small signal modulation bandwidth at 1 W output power.

Paper Details

Date Published: 1 April 1996
PDF: 10 pages
Proc. SPIE 2684, High-Speed Semiconductor Laser Sources, (1 April 1996); doi: 10.1117/12.236938
Show Author Affiliations
Jean-Marc Verdiell, SDL, Inc. (United States)
Robert J. Lang, SDL, Inc. (United States)
Kenneth M. Dzurko, SDL, Inc. (United States)
Stephen O'Brien, SDL, Inc. (United States)
Jules S. Osinski, SDL, Inc. (United States)
David F. Welch, SDL, Inc. (United States)
Donald R. Scifres, SDL, Inc. (United States)

Published in SPIE Proceedings Vol. 2684:
High-Speed Semiconductor Laser Sources
Paul A. Morton; Deborah L. Crawford, Editor(s)

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