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Proceedings Paper

30-Gbit/s transmission experiment using directly modulated semiconductor lasers
Author(s): John Edward Bowers; Peter Blixt; Anders Petersen; Paul A. Morton; Rang-Chen Yu; Stephen M. Beccue; Klaus R. Runge; K. C. Wang
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Paper Abstract

Experimental results from directly modulated semiconductor lasers at 30 Gbit/s are presented. Critical problems for 30 Gbit/s electronic TDM systems are discussed as well as advances in component technology for 30 Gbit/s transmission systems.

Paper Details

Date Published: 1 April 1996
PDF: 4 pages
Proc. SPIE 2684, High-Speed Semiconductor Laser Sources, (1 April 1996); doi: 10.1117/12.236930
Show Author Affiliations
John Edward Bowers, Univ. of California/Santa Barbara (United States)
Peter Blixt, Univ. of California/Santa Barbara (United States)
Anders Petersen, Univ. of California/Santa Barbara (United States)
Paul A. Morton, AT&T Bell Labs. (United States)
Rang-Chen Yu, Conductus, Inc. (United States)
Stephen M. Beccue, Rockwell Science Ctr. (United States)
Klaus R. Runge, Rockwell Science Ctr. (United States)
K. C. Wang, Rockwell Science Ctr. (United States)

Published in SPIE Proceedings Vol. 2684:
High-Speed Semiconductor Laser Sources
Paul A. Morton; Deborah L. Crawford, Editor(s)

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