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Proceedings Paper

Mode-locked laser realized by selective area growth for short pulse generation and optical clock recovery in TDM systems
Author(s): Eugen Lach; Dieter Baums; Jamal Bouayad-Amine; Claudia Hache; Hansjorg Haisch; Edgar Kuhn; Klaus Satzke; Michael Schilling; Juergen Weber; Erich Zielinski
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Paper Abstract

We report on monolithically integrated active/passive coupled cavity mode locked lasers for 1.55 micrometer realized by selective area growth technology of InGaAs(P) quantum wells. Mode locked FP or DBR lasers are fabricated with an integrated cavity comprising up to three different band gaps. The devices emit short light pulses at around 10 GHz repetition rate with pulse width down to 8.7 ps. A time-bandwidth product of 0.5 is achieved for mode locked DBR lasers. Active/passive integrated mode locked laser is used for generation of optical 10 GHz clock signal from optical 10 Gb/s PRBS RZ data stream injected into the laser cavity.

Paper Details

Date Published: 1 April 1996
PDF: 8 pages
Proc. SPIE 2684, High-Speed Semiconductor Laser Sources, (1 April 1996); doi: 10.1117/12.236929
Show Author Affiliations
Eugen Lach, Alcatel Corporate Research Ctr. (Germany)
Dieter Baums, Alcatel Corporate Research Ctr. (Germany)
Jamal Bouayad-Amine, Alcatel Corporate Research Ctr. (Germany)
Claudia Hache, Alcatel Corporate Research Ctr. (Germany)
Hansjorg Haisch, Alcatel Corporate Research Ctr. (Germany)
Edgar Kuhn, Alcatel Corporate Research Ctr. (Germany)
Klaus Satzke, Alcatel-Telletra Research Ctr. (Germany)
Michael Schilling, Alcatel Corporate Research Ctr. (Germany)
Juergen Weber, Alcatel Corporate Research Ctr. (Germany)
Erich Zielinski, Alcatel Corporate Research Ctr. (Germany)


Published in SPIE Proceedings Vol. 2684:
High-Speed Semiconductor Laser Sources
Paul A. Morton; Deborah L. Crawford, Editor(s)

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