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Proceedings Paper

Laser-based probes of chemically induced Raman pumping
Author(s): David R. Grantier; James L. Gole
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Paper Abstract

The highly selective Na3 + Br reaction creates a continuous electronic population inversion on Na2 transitions which demonstrates optical gain through stimulated emission in regions close to 527, 492, and 460 nm ((alpha) equals 8 X 10-3 cm-1 for an individual rotational level at approximately 527 nm). With a focus to increasing amplifier gain length and amplifying medium concentration (conversion to oscillator), we extend these initial studies employing the intersection of sodium and bromine flows formed from slit source expansions to create an extended reaction-amplification zone. Initial results with this extended reaction zone provide the first example of chemically induced Raman pumping. Unique Raman signals are induced by and correlate with emission from the NaD-line components (D1, D2) formed in the chemical reaction zone primarily as a result of the Na2 + Br yields Na* (3P) + NaBr reaction. The NaD-line emitters interact with cooled sodium dimers in a resonance Raman scattering process, for which computer simulation of the experimentally observed spectra predict an unusually large scattering linewidth close to 4 cm-1. We describe initial laser based studies on a pure sodium expansion to probe the mechanism of the unusually strong Raman scattering and to understand the origin of the large scattering linewidth. These experiments demonstrate that the Raman process can be induced only upon excitation of the NaD-line components, the Raman scattering being insufficient or nonexistent for wavelength shifts (Delta) (lambda) > 1 nm from the D lines. The scattering linewidth for the reactive process is not readily correlated with the line-broadening of the NaD-line and may result from the nature of the Na- Na2 interaction in the reactive environment. Initial double pass measurements indicate the possibility of optical gain associated with the Raman process.

Paper Details

Date Published: 29 March 1996
PDF: 12 pages
Proc. SPIE 2702, Gas and Chemical Lasers, (29 March 1996); doi: 10.1117/12.236902
Show Author Affiliations
David R. Grantier, Georgia Institute of Technology (United States)
James L. Gole, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 2702:
Gas and Chemical Lasers
Robert C. Sze, Editor(s)

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