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Proceedings Paper

Absorption and luminescence of Cr3+-doped solid solutions of gallium-indium oxides
Author(s): V. I. Vasyltsiv; Y. I. Rym; Y. M. Zakharko
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Paper Abstract

Optical absorption, luminescence, kinetics of decay and temperature dependence of luminescence characteristic of Cr3+-doped solid-solutions of gallium and indium oxides were investigated. The single crystals of J3-Ga2-xinx03 solid-solution x=(0-0,2) were grown by floating zone technique using radiation heating. If x increases from 0 to 0,2, interionic distances 0-Ga of gallium octahedron and tetrahedron increase on the average of 1-1,5 % and, as consequence, the position of steep absorption edge of band-to-band electron transitions shifts towards smaller energies approximately by 0,3 eV. Simultaneously the changes of luminescence spectral compositions and luminescence lifetime shortening are observed. When the indium content increases, the R-lines luminescence decreases, but the wide band luminescence from 4T2 levels of Cr3+ -ion increases. The influence of indium oxide concentration on emission, temperature quenching and shortening of luminescence lifetime is interpreted by mutual approaching of 2E and 4T2 levels of Cr3+ -ions. Keywords: oxide, solid-solution, crystal growth, optical properties, absorption, luminescence, kinetics of decay, Cr3+-doped crystals

Paper Details

Date Published: 25 March 1996
PDF: 7 pages
Proc. SPIE 2698, Solid State Lasers V, (25 March 1996); doi: 10.1117/12.236165
Show Author Affiliations
V. I. Vasyltsiv, Lviv State Univ. (Ukraine)
Y. I. Rym, Lviv State Univ. (Ukraine)
Y. M. Zakharko, Lviv State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 2698:
Solid State Lasers V
Richard Scheps, Editor(s)

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