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Proceedings Paper

GdVO4 crystals with Nd3+, Tm3+, Ho3+, and Er3+ ions for diode-pumped microchip laser
Author(s): Alexander I. Zagumennyi; Yury D. Zavartsev; Pavel A. Studenikin; Ivan Alexandrov Shcherbakov; Alexander F. Umyskov; Pavel A. Popov; Vsevolod B. Ufimtsev
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Paper Abstract

The Nd:GdVO4, Ho:Tm:GdVO4, Tm:GdVO4, Er:GdVO4, Yb:GdVO4 crystals were grown by Czochralski technique. Distribution coefficients of Yb3+, Tm3+, Er3+, Nd3+ ions depend linearly on average radius of a dodecahedral ion. Refractive indices are measured with accuracy within 5 by 10-5 in a range 400 - 1100 nm. Refractive indices depend on the size of the average dodecahedral radius. The thermal conductivity of the doped crystals in the 50 - 300 K temperature range is measured. The thermal conductivity in the <001> crystal direction at a temperature of 300 K is 12.3 W/m by K it is more than thermal conductivity of well-known Nd:YAG laser crystal. As a result of analysis it is shown that vanadate crystals have essential advantages for diode pump lasers in comparison with conventional YAG and YVO4 hosts: large stimulated emission cross section at lasing wavelength; wide absorption band at pump wavelength; low dependency on a pump wavelength and a temperature control of a diode laser; low lasing threshold. For compact design lasers were made crystals with thickness from 2 mm up to 150 micrometers. Microchip laser (monolithic laser) consists of flat-flat cavities formed by a short length of crystal with dielectric cavity mirrors deposited directly on the surfaces.

Paper Details

Date Published: 25 March 1996
PDF: 11 pages
Proc. SPIE 2698, Solid State Lasers V, (25 March 1996); doi: 10.1117/12.236153
Show Author Affiliations
Alexander I. Zagumennyi, General Physics Institute (Russia)
Yury D. Zavartsev, General Physics Institute (Russia)
Pavel A. Studenikin, General Physics Institute (Russia)
Ivan Alexandrov Shcherbakov, General Physics Institute (Russia)
Alexander F. Umyskov, General Physics Institute (Russia)
Pavel A. Popov, Bryansk State Pedagogical Institute (Russia)
Vsevolod B. Ufimtsev, Institute of Chemical Problems of Microelectronics (Russia)


Published in SPIE Proceedings Vol. 2698:
Solid State Lasers V
Richard Scheps, Editor(s)

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