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Proceedings Paper

Magnetron plasma etching of SiC for microstructures
Author(s): Glenn Beheim; Carl Salupo
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Paper Abstract

Fast means of etching SiC are required for the fabrication of SiC microstructures. Single- crystal 6H-SiC was etched at rates as high as 640 nm/min in a magnetron plasma reactor using a mixture of CHF3 and O2. Extremely smooth surfaces were obtained, even for etches of several micrometer depth. At a lower rf power, 50 W instead of 250 W, a 12:1 selectivity with respect to aluminum was demonstrated, with a SiC etch rate of 170 nm/min. These preliminary results show that this approach is potentially a very useful tool for SiC microfabrication.

Paper Details

Date Published: 25 March 1996
PDF: 5 pages
Proc. SPIE 2686, Integrated Optics and Microstructures III, (25 March 1996); doi: 10.1117/12.236126
Show Author Affiliations
Glenn Beheim, NASA Lewis Research Ctr. (United States)
Carl Salupo, Cortez III (United States)

Published in SPIE Proceedings Vol. 2686:
Integrated Optics and Microstructures III
Massood Tabib-Azar, Editor(s)

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