Share Email Print

Proceedings Paper

X-ray solid state image device on the base of Me- a-As2Se3-Si structures
Author(s): Sergei A. Malkov; Andrei M. Andriesh; Victor I. Verlan
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The A62Se3 - Si02 - Si structure with A62Ses for writing a.nd Si for readout :h.a.s been suggested ior Xra. y a.pplica.tion. In this structure th.e recording been. ca.:rri.ed out under sim:ulta.n.eous projectioit oi a.n X-ray pa.ttern on the top semitransparent contact a.nd a.pplica.tion of the external, but the erasing - under illumin.a.tion. of light from the of th.e .4s2S es a.bsorption. a.n.d a.pplica.tion. of th.e opposite pola.rity external voltage. Th.e cha.."ging kinetics was revealed to be described by exponential la.w with. saturation.. It was found th.e charge is at th.e deep disposed a.t th.e As2Se3- Si02 interface. structure it possible to work m the integration small signa.i regime but the space separation. of recording and read.out layers provides un.destromg readout of image. It was established th.e da.rk rela.xa.tion of a.ccumula.ted cha.rge ta.kes place due to th.e.rmo-:iield emission of holes from according to Pool-Frenkel la.w. Keywords: solid state detector, image device structure, X-ray, area meter, amorph.ous semiconductor

Paper Details

Date Published: 25 March 1996
PDF: 9 pages
Proc. SPIE 2654, Solid State Sensor Arrays and CCD Cameras, (25 March 1996); doi: 10.1117/12.236092
Show Author Affiliations
Sergei A. Malkov, Institute of Applied Physics (Moldova)
Andrei M. Andriesh, Institute of Applied Physics (Moldova)
Victor I. Verlan, Institute of Applied Physics (Moldova)

Published in SPIE Proceedings Vol. 2654:
Solid State Sensor Arrays and CCD Cameras
Constantine N. Anagnostopoulos; Morley M. Blouke; Michael P. Lesser, Editor(s)

© SPIE. Terms of Use
Back to Top