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Proceedings Paper

Influence of photon energy on the photoemission from ultrafast electronic materials
Author(s): Kamakhya Prasad Ghatak; Ardhendhu Ghoshal; Sankar Bhattacharyya; Manabendra Mondal
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Paper Abstract

In this paper, an attempt is made to study the photoemission from quantum well, quantuni wires and q,uantum dots of ultrafast electronic materials taking n-CdGeAs as an example. The above class of materials are being increasingly used in light end.tting diodes. We have formulated the photoernission from the aforeznentioned ultrafast electronic materials by deducing the,new carrier energy spec tra in all c ase s, witbi ri the framework o f k •p. formal Is taking into account various types of anisotropies of the energy band parameters of the said systems. It :I.s found, that the photo emission increases with incident photon energy in a ladder like manner and also exhibits oscillatory dependences with changing film thickne ss and the c arrier density re spec tively for all the cases. The numerical values of the photoeniission is greatest in quantum dots and least in quantum wells. The well-known results have been shown as special cases under certain limiting conditions of our generalized expressions, The theoretical formulations are in agreement with. the experimental observations as reported elsewhere.

Paper Details

Date Published: 1 January 1991
PDF: 19 pages
Proc. SPIE 1346, Ultrahigh- and High-Speed Photography, Videography, Photonics, and Velocimetry '90, (1 January 1991); doi: 10.1117/12.23373
Show Author Affiliations
Kamakhya Prasad Ghatak, Univ. of Jadavpur (India)
Ardhendhu Ghoshal, Univ. of Jadavpur (India)
Sankar Bhattacharyya, ITC Ltd. (India)
Manabendra Mondal, Y.S. Palpara College (India)

Published in SPIE Proceedings Vol. 1346:
Ultrahigh- and High-Speed Photography, Videography, Photonics, and Velocimetry '90
Paul A. Jaanimagi; Barry T. Neyer; Larry L. Shaw, Editor(s)

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