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Proceedings Paper

Controlling Te inclusion during direct mixed solution growth of large size CdZnTe crystal
Author(s): Song Zhang; Cheng Wang; Bo Zhao; Hui Zhang; Lili Zheng
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Paper Abstract

CdZnTe (CZT) is proved to be a perfect material during the fabrication of detectors for X-ray and Gamma ray. However, Te inclusion is one of the main defects in CZT crystal which influences the electrical and spectroscopic properties of the detectors. This paper presents optimization of hot zone design and operating conditions by direct mixed solution growth (DMSG) method in order to reduce the formation of Te inclusion. The growth temperature is 890°C and the growth rate is 5mm/day. With the temperature gradient increased from 20K/cm to 40K/cm, the number of Te inclusion is reduced sharply while the size of Te inclusion is still large. When accelerated crucible rotation technique (ACRT) is introduced, the size of Te inclusion is reduced significantly. Large-size Te inclusion almost disappears under IR imaging. The density of Te inclusion which is larger than 1×104cm3. The resistivity of the as grown crystal is higher than 1010Ωxcm. At last, the influence of ACRT sequences on Te formation is discussed.

Paper Details

Date Published: 13 September 2018
PDF: 7 pages
Proc. SPIE 10762, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XX, 107620V (13 September 2018); doi: 10.1117/12.2327047
Show Author Affiliations
Song Zhang, Tsinghua Univ. (China)
Cheng Wang, Ruiyan Technology Co. Ltd. (China)
Bo Zhao, Ruiyan Technology Co. Ltd. (China)
Hui Zhang, Tsinghua Univ. (China)
Lili Zheng, Tsinghua Univ. (China)


Published in SPIE Proceedings Vol. 10762:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XX
Stephen A. Payne; Ralph B. James; Arnold Burger; Michael Fiederle, Editor(s)

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